Demonstration of Lg ∼ nm pMOSFETs with Si/Si0.25Ge0.75/Si channels, high Ion/Ioff (>5 × 104, and controlled short channel effects (SCEs)

IEEE Electron Device Letters

Volumn 29, Issue 9, 2008, Pages 1017-1020

  Lee, Se Hoon ^a,b   Majhi, Prashant ^b   Oh, Jungwoo ^b   Sassman, Barry ^b   Young, Chadwin ^b   Bowonder, Anupama ^b   Loh, Wei Yip ^b   Choi, Kyu Jin ^c,d   Cho, Byung Jin ^e   Lee, Hi Deok ^a,f   Kirsch, Paul ^b   Harris, Harlan Rusty ^b   Tsai, Wilman ^g   Datta, Suman ^h   Tseng, Hsing Huang ^b   Banerjee, Sanjay K ^a   Jammy, Raj ^b  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b SEMATECH   (United States)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d Jusung Engineering Company Limited   (South Korea)

^e Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^f Chungnam National University   (South Korea)

^g INTEL CORPORATION   (United States)

^h PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Band to band tunneling (BTBT); Effective oxide thickness (EOT); Intrinsic gate delay; Short channel effect (SCE); Silicon germanium (SiGe)

Indexed keywords

GERMANIUM; SILICON;

BAND-TO-BAND TUNNELING (BTBT); EFFECTIVE OXIDE THICKNESS (EOT); INTRINSIC GATE DELAY; SHORT CHANNEL EFFECT (SCE); SILICON GERMANIUM (SIGE);

MOSFET DEVICES;

EID: 50649109671     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2002073     Document Type: Article

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