Electromigration and stress-induced-voiding in dual damascene Cu/low-k interconnects: A complex balance between vacancy and stress gradients

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 591-598

  Croes, K ^a   Wilson, C J ^a   Lofrano, M ^a   Vereecke, B ^a   Beyer, G P ^a   Tokei, Z S ^a  

^a IMEC   (Belgium)

Author keywords

BEOL; Copper; Electromigration; FEM; Stress; Stress induced voiding; Vacancy

Indexed keywords

BEOL; COPPER STRESS; CU/LOW-K INTERCONNECTS; DUAL DAMASCENE; FEM; HIGH TEMPERATURE STORAGE TEST; LOW-K MATERIALS; METAL LAYER; RESIDUAL STRESS GRADIENTS; STRESS GRADIENT; STRESS-INDUCED-VOIDING; VACANCY CONCENTRATION;

COPPER;

ELECTROMIGRATION;

EID: 77957889149     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488764     Document Type: Conference Paper

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