Defects in electroplated Cu and their impact on stress migration reliability studied using monoenergetic positron beams

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 1938-1941

  Uedono, Akira ^a   Suzuki, Takashi ^b   Nakamura, Tomoji ^b   Ohdaira, Toshiyuki ^c   Suzuki, Ryoichi ^c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b Semiconduct Technol Acad Res C   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Defects; Electroplated Cu; Positron annihilation; Stress migration reliability

Indexed keywords

ANNEALING; COPPER; DEFECT STRUCTURES; ELECTROLYTES; POSITRON ANNIHILATION; VACANCIES;

IMPURITY CONCENTRATION; STRESS MIGRATION RELIABILITY; VOID FORMATION;

ELECTROPLATED PRODUCTS;

EID: 34547869681     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.1938     Document Type: Article

References (22)

1. The International. Technology Roadmap for Semiconductors (International Sematech, Austin, TX, 2005 ed.).
2. Y. Shacham-Diamond, V. Dubin, and M. Angyal: Thin Solid Films 262 (1995) 93.
3. C. Lingk and M. E. Gross: J. Appl. Phys. 84 (1998) 5547.
4. E. C. Cooney III, D. C. Strippe, and J. W. Korejwa: J. Vac. Sci. Technol. A 18 (2000) 1550.
5. A. Sekiguchi, J. Koike, S. Kamiya, M. Saka, and K. Maruyama: Appl. Phys. Lett. 79 (2001) 1264.
6. E. Liniger, L. Gignac, C.-K. Hu, and S. Kaldor: J. Appl. Phys. 92 (2002) 1803.
7. H. Lee, S. S. Wong, and S. D. Lopatin: J. Appl. Phys. 93 (2003) 3796.
8. D. Gan, P. S. Ho, R. Huang, J. Leu, J. Maiz, and T. Scherban: J. Appl. Phys. 97 (2005) 103531.
9. P. Hautojärvi: Positron in Solids (Springer-Verlag, Berlin, 1979) Topics in Current Physics, Vol. 12.
10. K. Hinode, S. Tanigawa, and M. Doyama: J. Phys. Soc. Jpn. 41 (1976) 2037.
11. S. Mantl and W. Triftshäuser: Phys. Rev. B 17 (1978) 1645.
12. H.-E. Schaefer: Phys. Status Solidi A 102 (1987) 47.
13. J.-E. Kluin and Th. Hehenkamp: Phys. Rev. B 44 (1991) 11597.
14. T. E. M. Staab, R. Krause-Rehberg, B. Vetter, and B. Kieback: J. Phys.: Condens. Matter 11 (1999) 1757.
15. M.. Eldrup and B. N. Singh: J. Nucl. Mater. 276 (2000) 269.
16. A. Uedono, T. Suzuki, and T. Nakamura: J. Appl. Phys. 95 (2004) 913.
17. A. Uedono, T. Suzuki, T. Nakamura, T. Ohdaira, and R. Suzuki: J. Appl. Phys. 98 (2005) 043504.
18. A. Hobbs, S. Murakami, T. Hosoda, S. Ohtsuka, M. Miyajima, S. Sugatani, and T. Nakamura: Mater. Trans. 43 (2002) 1629.
19. A. van Veen, H. Schut, J. de Vries, R. A. Hakvoort, and M. R. Ijpma: AIP Conf. Proc. 218 (1990) 171.
20. R. Suzuki, T. Ohdaira, and T. Mikado: Radiat. Phys. Chem. 58 (2000) 603.
21. P. Kirkegaard, M. Eldrup, O. E. Mogensen, and N. J. Pedersen: Comput. Phys. Commun. 23 (1981) 307.
22. M. W. Thompson: Defects and Radiation Damage in Metals (Cambridge Univ. Press, Cambridge, 1969) p. 266.