Process optimization-the key to obtain highly reliable Cu interconnects

Proceedings of the IEEE 2003 International Interconnect Technology Conference, IITC 2003

Volumn , Issue , 2003, Pages 253-255

  Fischer, A H ^a   Von Glasow, A ^a   Penka, S ^a   Ungar, F ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Copper; Electrical resistance measurement; Electromigration; Etching; High temperature superconductors; Metallization; Monitoring; Plugs; Stress; Testing

Indexed keywords

COPPER; ELECTROMIGRATION; ETCHING; HIGH TEMPERATURE SUPERCONDUCTORS; METALLIZING; MONITORING; OPTIMIZATION; STRESSES; TESTING;

COPPER INTERCONNECTS; CU-INTERCONNECTS; ELECTRICAL RESISTANCE MEASUREMENT; PLUGS; STRESS VOIDING;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84944030310     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2003.1219768     Document Type: Conference Paper

References (4)

1. A.H. Fischer et al.: "EM and SM Failure Mechanism Studies in Cu Interconnects", Semicon Japan 2002, pp.7-35...42
2. E. Ogawa et al.: "Statistics of Electromigration Early Failures in Cu/Oxide Dual-Damascene Interconnects", IRPS 2001, pp. 341-349
3. E. Ogawa et al.: Stress-Induced Voiding Under Vias Connected to Wide Cu Metal Leads", IRPS 2002, pp. 312-321
4. A. von Glasow et al.: "Using the TCR as Early Reliability Indicator for SV Risks in Cu Interconnects", IRPS 2003, pp. 126-131