Electromigration study of sub-100nm Cu-lines

Advanced Metallization Conference (AMC)

Volumn , Issue , 2004, Pages 253-257

  Michelon, J ^a   Bruynseraede, C ^b,d   Castro, D Tio ^a   Roussel, P ^b,d   Hoofman, R J O M ^a   Maex, K ^b,c,d  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d Aetrium Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; COPPER; ELECTRIC RESISTANCE; ENCAPSULATION; SILICON COMPOUNDS; STRAPPING; STRESSES; TANTALUM COMPOUNDS; TRENCHING;

COPPER LINES; CURRENT EXPONENT EXTRACTION; RESISTANCE PROFILE; VOID GROWTH;

ELECTROMIGRATION;

EID: 23844467793     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. S. Demuynck et al, Proc. AMC 2003, p.355
2. D. Edelstein et al., Proc. IITC 2001, p. 9
3. H. Li, et al., in Advanced Metallization and Interconnect Systems for ULSI Applications in 1997, edited by R. Cheung, et al., (MRS, Pittsburgh, PA, 1998), p. 197.