-
2
-
-
48249120444
-
EM and SIV of Cu-lowk semiconductor interconnects - 65nmm interconnect technology and beyond
-
He, X., "EM and SIV of Cu-lowk semiconductor interconnects - 65nmm interconnect technology and beyond", J. Nanoelec .Optoelec., Vol. 2, p. 115, 2007
-
(2007)
J. Nanoelec .Optoelec
, vol.2
, pp. 115
-
-
He, X.1
-
3
-
-
34548737121
-
New degradation phenomena of stress-induced voiding inside VIA in copper interconnects
-
Matsuyama, H., et. al., "New degradation phenomena of stress-induced voiding inside VIA in copper interconnects", IEEE Int. Reliability Physics Symposium. (IRPS), p. 638, 2007
-
(2007)
IEEE Int. Reliability Physics Symposium. (IRPS)
, pp. 638
-
-
Matsuyama, H.1
et., al.2
-
4
-
-
33644893600
-
The influence of temperature and dielectric materials on stress induced voiding in Cu dual damascene interconnects
-
Gan, Z., Shao, W., Mhaisalkar, S.G., Chen, Z., and Li, H., "The influence of temperature and dielectric materials on stress induced voiding in Cu dual damascene interconnects", Thin Solid Films, 504, p. 161, 2006
-
(2006)
Thin Solid Films
, vol.504
, pp. 161
-
-
Gan, Z.1
Shao, W.2
Mhaisalkar, S.G.3
Chen, Z.4
Li, H.5
-
6
-
-
33748038771
-
A Study of Cu Low-k Stress-induced Voiding at Via Bottom and Its Microstructure Effect
-
Wang, R.C.J., Lee, C.C., Chen, L.D., Wu, K. and Chang-Liao, K. S., "A Study of Cu Low-k Stress-induced Voiding at Via Bottom and Its Microstructure Effect" Microelec. Rel., Vol. 46, p. 1673, 2006
-
(2006)
Microelec. Rel
, vol.46
, pp. 1673
-
-
Wang, R.C.J.1
Lee, C.C.2
Chen, L.D.3
Wu, K.4
Chang-Liao, K.S.5
-
7
-
-
51549083252
-
Investigation of stress-induced voiding inside and under VIA's in copper interconnect with wing pattern
-
Matsuyama, H., et. al., "Investigation of stress-induced voiding inside and under VIA's in copper interconnect with wing pattern", IEEE Int. Reliability Physics Symposium. (IRPS), p. 683, 2008
-
(2008)
IEEE Int. Reliability Physics Symposium. (IRPS)
, pp. 683
-
-
Matsuyama, H.1
et., al.2
-
8
-
-
51549117536
-
Characterization of Stress-Voiding of Cu / Low-k Vias Attached to Narrow Lines
-
Lin, H.Y., Lee, S.C. and Oates, A.S., "Characterization of Stress-Voiding of Cu / Low-k Vias Attached to Narrow Lines", IEEE Int. Reliability Physics Symposium. (IRPS), p. 687, 2008
-
(2008)
IEEE Int. Reliability Physics Symposium. (IRPS)
, pp. 687
-
-
Lin, H.Y.1
Lee, S.C.2
Oates, A.S.3
-
9
-
-
34250716958
-
Oxidation of the Ta diffusion barrier and its effect on the reliability of Cu interconnects
-
Baek, W.-C., et. al., "Oxidation of the Ta diffusion barrier and its effect on the reliability of Cu interconnects", IEEE Int. Reliability Physics Symposium. (IRPS), p. 131, 2006
-
(2006)
IEEE Int. Reliability Physics Symposium. (IRPS)
, pp. 131
-
-
Baek, W.-C.1
et., al.2
-
10
-
-
0001163312
-
A model for stress-induced metal notching and voiding in very large-scale-integrated Al-Si(1%) metallization
-
McPherson, J.W. and Dunn, C.F., "A model for stress-induced metal notching and voiding in very large-scale-integrated Al-Si(1%) metallization," J. Vac. Sci. & Tech, B5(5), pp. 1321-1325, 1987
-
(1987)
J. Vac. Sci. & Tech
, vol.B5
, Issue.5
, pp. 1321-1325
-
-
McPherson, J.W.1
Dunn, C.F.2
-
11
-
-
42649144738
-
Temperature-dependent stress-induced voiding in dual-damascene Cu interconnects
-
Wu, Z.., et. al., "Temperature-dependent stress-induced voiding in dual-damascene Cu interconnects", Microelec. Rel., Vol. 48, p. 578, 2008
-
(2008)
Microelec. Rel
, vol.48
, pp. 578
-
-
Wu, Z.1
et., al.2
-
12
-
-
0000034975
-
Electromigration path in Cu thin-film lines
-
Hu, C.-K., Rosenberg, R. and Lee, K.Y.," Electromigration path in Cu thin-film lines", Appl. Phys. Lett., Vol. 74, p. 2945, 1999
-
(1999)
Appl. Phys. Lett
, vol.74
, pp. 2945
-
-
Hu, C.-K.1
Rosenberg, R.2
Lee, K.Y.3
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