Barrier height and ideality factor dependency on identically produced small Au/p-Si Schottky barrier diodes

Journal of Semiconductors

Volumn 31, Issue 7, 2010, Pages

  Yeganeh, M A ^a   Rahmatollahpur, S H ^b  

^a BAKU STATE UNIVERSITY   (Azerbaijan)

^b SHARIF UNIVERSITY OF TECHNOLOGY   (Iran)

Author keywords

Barrier height and ideality factor; Conducting probe atomic force microscope; Schottky barrier diodes

Indexed keywords

AFM; ATOMIC FORCE MICROSCOPES; BARRIER HEIGHTS; BUILT-IN POTENTIAL; CONDUCTING PROBES; HIGH QUALITY; IDEALITY FACTORS; REVERSE LEAKAGE CURRENT; SCIENTIFIC EVIDENCE;

ATOMIC FORCE MICROSCOPY; ATOMS; CURRENT VOLTAGE CHARACTERISTICS; MICROSCOPES; PROBES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

SEMICONDUCTOR DIODES;

EID: 77957881414     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/31/7/074001     Document Type: Article

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