Development and characteristics analysis of recessed-gate MOS HEMT

Journal of Semiconductors

Volumn 30, Issue 5, 2009, Pages

  Wang, Chong ^a   Ma, Xiaohua ^a   Feng, Qian ^a   Hao, Yue ^a   Zhang, Jincheng ^a   Mao, Wei ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

AlGaN GaN; Dielectric gate; High electron mobility transistors; Recessed gate

Indexed keywords

ALGAN/GAN; ALGAN/GAN HEMTS; CHARACTERISTICS ANALYSIS; DIELECTRIC GATE; DIELECTRIC GATES; EXTRINSIC TRANSCONDUCTANCE; GATE LENGTH; GATE-LEAKAGE CURRENT; MAXIMUM DRAIN CURRENT; MAXIMUM FREQUENCY OF OSCILLATIONS; MOSHEMT; ORDERS OF MAGNITUDE; RECESSED GATE; SAPPHIRE SUBSTRATES; SCHOTTKY CONTACTS; SOURCE-DRAIN;

DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM NITRIDE; LEAKAGE CURRENTS; TRANSCONDUCTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 65649092176     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/30/5/054002     Document Type: Article

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