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Volumn 22, Issue 36, 2010, Pages 4020-4024

Three-dimensional carrier profi ling of individual si nanowires by scanning spreading resistance microscopy

(7) Ou, Xin a,b,c Kanungo, Pratyush Das a Kögler, Reinhard b Werner, Peter a Gösele, Ulrich a Skorupa, Wolfgang b Wang, Xi c

a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

c SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS SECTION; SCANNING SPREADING RESISTANCE MICROSCOPY; SI NANOWIRE;

NANOWIRES; SCANNING; SCANNING ELECTRON MICROSCOPY;

THREE DIMENSIONAL;

NANOWIRE; SILICON;

ARTICLE; CHEMICAL STRUCTURE; CHEMISTRY; CONFORMATION; IMPEDANCE; METHODOLOGY; SCANNING ELECTRON MICROSCOPY;

ELECTRIC IMPEDANCE; MICROSCOPY, ELECTRON, SCANNING; MODELS, MOLECULAR; MOLECULAR CONFORMATION; NANOWIRES; SILICON;

EID: 77957594082 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201001086 Document Type: Article

Times cited : (10)

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