Scanning spreading resistance microscopy of shallow doping profiles in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 253, Issue 1-2, 2006, Pages 141-144

  Suchodolskis, A ^a,b   Hallen A ^a   Gran, J ^c   Hansen, T E ^d   Karlsson, U O ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^c Justervesenet   (Norway)

^d AME   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; CARRIER CONCENTRATION; CONCENTRATION (PROCESS); DOPING (ADDITIVES); ION IMPLANTATION; SILICON;

ELECTRICALLY ACTIVE DOPANT CONCENTRATION; INCOMPLETE ACTIVATION; POST IMPLANTATION ANNEALING; SCANNING SPREADING RESISTANCE MICROSCOPY (SSRM);

SCANNING ELECTRON MICROSCOPY;

EID: 33751331271     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.10.050     Document Type: Article

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