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Volumn 80, Issue 13, 2002, Pages 2275-2277

Raman mapping, photoluminescence investigations, and finite element analysis of epitaxial lateral overgrown GaN on silicon substrates

(4) Benyoucef, M a Kuball, M a Beaumont, B b Gibart, P b

a UNIVERSITY OF BRISTOL (United Kingdom)

b CRHEA CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; DONOR-BOUND EXCITON; EPITAXIAL LATERAL OVERGROWN; FINITE ELEMENTS; GAN ON SILICON; LOW TEMPERATURES; OVERGROWN REGIONS; PHONON FREQUENCIES; PHOTOLUMINESCENCE INVESTIGATION; PL SPECTRA; RAMAN MAPPING; SI SUBSTRATES; STRUCTURAL DEFECT;

EPITAXIAL GROWTH; GALLIUM NITRIDE; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS;

FINITE ELEMENT METHOD;

EID: 79956053667 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1464664 Document Type: Article

Times cited : (26)

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