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Volumn 4, Issue 8-9, 2010, Pages 206-208

Hydrogenated amorphous silicon based surface passivation of c-Si at high deposition temperature and rate

Author keywords

Charge carrier recombination; Hydrogenated amorphous silicon; Si; Solar cells; Surface passivation

Indexed keywords

A-SI:H; CHARGE CARRIER RECOMBINATION; DEPOSITION METHODS; HIGH DEPOSITION TEMPERATURE; HYDROGENATED AMORPHOUS SILICON; LOW SUBSTRATE TEMPERATURE; POST-DEPOSITION; SI; SI WAFER; SURFACE PASSIVATION; THERMAL TREATMENT;

EID: 77957055206     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201004234     Document Type: Article
Times cited : (10)

References (28)
  • 12
    • 77957089651 scopus 로고    scopus 로고
    • See e.g
    • See e.g. http://www.ferro.com/Our+Products/Electronic/Products+and+Markets/Photovoltaic+Materials/.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.