Real-time study of a-Si:H/c-Si heterointerface formation and epitaxial Si growth by spectroscopic ellipsometry, infrared spectroscopy, and second-harmonic generation

Physical Review B - Condensed Matter and Materials Physics

Volumn 77, Issue 20, 2008, Pages

  Gielis, J J H ^a   Van Den Oever, P J ^a   Hoex, B ^a   Van De Sanden, M C M ^a   Kessels, W M M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 44449119020     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.77.205329     Document Type: Article

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