Amorphization of Si(100) by Ar+ -ion bombardment studied with spectroscopic and time-resolved second-harmonic generation

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 28, Issue 2, 2010, Pages 293-301

  Gevers, P M ^a   Gielis, J J H ^a   Beijerinck, H C W ^a   Van De Sanden, M C M ^a   Kessels, W M M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON (A-SI); CRYSTALLINE SILICONS; ELECTRONIC TRANSITION; ENERGY REGIONS; ION ENERGIES; ION FLUXES; LAYERED STRUCTURES; LOW ENERGIES; OPTICAL SECOND-HARMONIC GENERATION; PHOTON ENERGY RANGE; PHYSICAL SPUTTERING; REACTIVE GAS; SECOND HARMONIC GENERATION; SI(1 0 0); SILICON DANGLING BOND; SURFACE AND INTERFACES; TIME-RESOLVED; TOP SURFACE;

CRYSTALLINE MATERIALS; DANGLING BONDS; HARMONIC GENERATION; ION BOMBARDMENT; IONS; PHASE INTERFACES;

AMORPHOUS SILICON;

EID: 77949362897     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3305812     Document Type: Article

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