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Applied Physics Letters

Volumn 95, Issue 2, 2009, Pages

On the surface roughness development of hydrogenated amorphous silicon deposited at low growth rates

(3) Wank, M A a Van Swaaij, R A C M M a Van De Sanden, M C M b

a DELFT UNIVERSITY OF TECHNOLOGY (Netherlands)

b EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EXTERNAL RF SUBSTRATES; HYDROGENATED AMORPHOUS SILICON; HYDROGENATED AMORPHOUS SILICON (A-SI:H) FILMS; IN-SITU; LOW GROWTH RATE; NONLOCAL; RE-EMISSION; ROUGHNESS DEVELOPMENT; ROUGHNESS EVOLUTION; TEMPERATURE RANGE;

AMORPHOUS FILMS; COALESCENCE; HYDROGEN; HYDROGENATION; SPECTROSCOPIC ELLIPSOMETRY; SUBSTRATES; SURFACE DIFFUSION; SURFACE PROPERTIES; SURFACE ROUGHNESS;

AMORPHOUS SILICON;

EID: 67650751792 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3179151 Document Type: Article

Times cited : (7)

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