Sub-100 nm gate length metal gate NMOS transistors fabricated by a replacement gate process

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 821-824

  Chatterjee, A ^a   Chapman, R A ^a   Dixit, G ^a   Kuehne, J ^a   Hattangady, S ^a   Yang, H ^a   Brown, G A ^a   Aggarwal, R ^a   Erdogan, U ^a   He, Q ^a   Hanratty, M ^a   Rogers, D ^a   Murtaza, S ^a   Fang, S J ^a   Kraft, R ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

REMOTE PLASMA NITRIDE OXIDE GATE INSULATORS;

CAPACITANCE; ELECTRIC CURRENTS; ELECTRIC INSULATING MATERIALS; GATES (TRANSISTOR); NITRIDING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; TITANIUM NITRIDE; TRANSCONDUCTANCE;

MOSFET DEVICES;

EID: 84886448006     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)