Interfacial and electrical characterization in metal-oxide-semiconductor field-effect transistors with CeO2 gate dielectric

Japanese Journal of Applied Physics

Volumn 48, Issue 4 PART 2, 2009, Pages

  Chiu, Fu Chien ^a   Chen, Shuang Yuan ^b   Chen, Chun Heng ^c   Chen, Hung Wen ^b   Huang, Heng Sheng ^b   Hwang, Huey Liang ^c  

^a MING CHUAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; CAPTURE CROSS SECTIONS; CERIUM DIOXIDES; CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL CHARACTERIZATION; ENERGY DISTRIBUTIONS; INTERFACE TRAP DENSITY; INTERFACE TRAPS; INTERFACIAL PROPERTY; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFETS; PER UNIT;

CAPACITANCE; CERIUM; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); ION BEAMS; MOS CAPACITORS; MOSFET DEVICES;

GATE DIELECTRICS;

EID: 72449128393     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.04C014     Document Type: Article

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