Single domain hexagonal GaN films on GaAs (100) vicinal substrates grown by hydride vapor phase epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 7 SUPPL. B, 1996, Pages

  Yamaguchi, A Atsushi ^a   Manako, Takashi ^a   Sakai, Akira ^a   Sunakawa, Haruo ^a   Kimura, Akitaka ^a   Nido, Masaaki ^a   Usui, Akira ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Cubic; GaAs; GaN; Hexagonal; Substrate misorientation; Vapor phase epitaxy; X ray diffraction

Indexed keywords

CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; DIFFRACTOMETERS; EPITAXIAL GROWTH; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; VAPOR PHASE EPITAXY; X RAY CRYSTALLOGRAPHY;

FOUR CIRCLE DIFFRACTOMETER; HEXAGONAL GALLIUM NITRIDE; HYDRIDE VAPOR PHASE EPITAXY; SUBSTRATE MISORIENTATION;

SEMICONDUCTING FILMS;

EID: 0030190099     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l873     Document Type: Article

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