Gallium nitride thick films grown by hydride vapor phase epitaxy

Materials Research Society Symposium - Proceedings

Volumn 423, Issue , 1996, Pages 221-226

  Molnar, R J ^a   Maki, P ^a   Aggarwal, R ^a   Liau, Z L ^a   Brown, E R ^a   Melngailis, I ^a   Gotz, W ^a   Romano, L T ^a   Johnson, N M ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY (SPECIFIC GRAVITY); ELECTRON CYCLOTRON RESONANCE; ELECTRONIC PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITRIDES; NUCLEATION; SAPPHIRE; SEMICONDUCTOR DOPING; SURFACE TREATMENT; THICK FILMS;

GALLIUM NITRIDE; HYDRIDE VAPOR PHASE EPITAXY; NUCLEATION DENSITY;

SEMICONDUCTING FILMS;

EID: 0030409786     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-423-221     Document Type: Conference Paper

References (12)