Optimization of reactor geometry and growth conditions for GaN halide vapor phase epitaxy

Materials Research Society Symposium - Proceedings

Volumn 423, Issue , 1996, Pages 227-232

  Safvi, S A ^a   Perkins, N R ^a   Horton, M N ^a   Thon, A ^a   Zhi, D ^a   Kuech, T F ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; DEPOSITION; FILM GROWTH; FLOW OF FLUIDS; MATHEMATICAL MODELS; NITRIDES; OPTIMIZATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; VAPOR PHASE EPITAXY;

CONCENTRATION PROFILES; CRYSTAL QUALITY; FLOWRATE VARIATIONS; GALLIUM NITRIDE; HALIDE VAPOR PHASE EPITAXY; PARASITIC GAS PHASE REACTIONS; REACTOR GEOMETRY; WALL DEPOSITION;

CHEMICAL REACTORS;

EID: 0030388592     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-423-227     Document Type: Conference Paper

References (16)