Halide vapor phase epitaxy of gallium nitride films on sapphire and silicon substrates

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 243-248

  Perkins, N R ^a   Horton, M N ^a   Bandic, Z Z ^a   McGill, T C ^a   Kuech, T F ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LATTICE CONSTANTS; MORPHOLOGY; NITRIDES; NUCLEATION; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON; THERMAL EXPANSION; THICK FILMS; VAPOR PHASE EPITAXY; X RAY DIFFRACTION;

DEEP LEVEL EMISSION; GALLIUM NITRIDE; HALIDE VAPOR PHASE EPITAXY; THERMAL EXPANSION COEFFICIENT;

FILM GROWTH;

EID: 0029766284     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)