Structural characterization of thick GaN films grown by hydride vapor phase epitaxy

Materials Research Society Symposium - Proceedings

Volumn 423, Issue , 1996, Pages 245-250

  Romano, L T ^a   Molnar, R J ^a   Krusor, B S ^a   Anderson, G A ^a   Bour, D P ^a   Maki, P ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DENSITY (SPECIFIC GRAVITY); DISLOCATIONS (CRYSTALS); FILM GROWTH; NITRIDES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THICK FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

HYDRIDE VAPOR PHASE EPITAXY;

SEMICONDUCTING FILMS;

EID: 0030389093     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-423-245     Document Type: Conference Paper

References (8)