Annealing effects of in-depth profile and band discontinuity in TiN/LaO/HfSiO/SiO2/Si gate stack structure studied by angle-resolved photoemission spectroscopy from backside

Applied Physics Letters

Volumn 96, Issue 4, 2010, Pages

  Toyoda, S ^a,b   Kamada, H ^a   Tanimura, T ^a   Kumigashira, H ^a,b   Oshima, M ^a,b   Ohtsuka, T ^c   Hata, Y ^c   Niwa, M ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE RESOLVED PHOTOEMISSION SPECTROSCOPY; ANNEALING EFFECTS; BAND DISCONTINUITIES; CORE-LEVEL SPECTRA; GATE STACK STRUCTURE; IN-DEPTH PROFILE; INTERFACE DIPOLE; SI SUBSTRATES;

ATOMIC SPECTROSCOPY; LOGIC GATES; LUMINESCENCE OF ORGANIC SOLIDS; PHOTOEMISSION; PLASMAS; RADIATION EFFECTS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICON; SILICON COMPOUNDS;

EMISSION SPECTROSCOPY;

EID: 75749097784     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3298355     Document Type: Article

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15. B are inevitably involved in this study, due to electrical charging effects such as carrier trapping phenomena and fixed charges. Experimental errors are roughly estimated to be 0.1 eV by standard deviation of some data points.