Equivalent oxide thickness reduction for high-k gate stacks by optimized rare-earth silicate reactions

Electrochemical and Solid-State Letters

Volumn 12, Issue 5, 2009, Pages

  Van Elshocht, S ^a   Adelmann, C ^a   Lehnen, P ^b   De Gendt, S ^a,c  

^a IMEC   (Belgium)

^b AIXTRON AG   (Germany)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; HAFNIUM; HAFNIUM COMPOUNDS; LOGIC GATES; PLATINUM; RARE EARTH ELEMENTS; SCANDIUM; SILICATES; SILICON;

CAPACITANCE VOLTAGES; CURRENT-VOLTAGE MEASUREMENTS; EQUIVALENT-OXIDE THICKNESS; GATE STACKS; HIGH - K DIELECTRICS; HIGH-K GATE STACKS; INTERFACIAL LAYERS; LEAKAGE PERFORMANCE; RARE-EARTH; TEST CASE; TRANSISTOR PERFORMANCE;

OZONE WATER TREATMENT;

EID: 62649140005     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3086266     Document Type: Article

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