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Volumn 10, Issue 3, 2007, Pages

Physical and electrical properties of lanthanum oxide dielectrics with Al and AlTaN metal gates

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; HYSTERESIS; MAGNETRON SPUTTERING; PHYSICAL PROPERTIES; SECONDARY ION MASS SPECTROMETRY; SILICON;

GATE ELECTRODE; HIGH-K LANTHANUM OXIDE; RADIO-FREQUENCY SPUTTERING;

LANTHANUM COMPOUNDS;

EID: 33846582951 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.2428415 Document Type: Article

Times cited : (24)

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