Light-induced point defect reactions of residual iron in crystalline silicon after aluminum gettering

Journal of Applied Physics

Volumn 108, Issue 4, 2010, Pages

  Abdelbarey, D ^a   Kveder, V ^a   Schroter W ^a   Seibt, M ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CRYSTALLINE MATERIALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; POINT DEFECTS; SILICON;

ALUMINUM GETTERING; CRYSTALLINE SILICONS; DEFECT REACTIONS; IRON CONCENTRATIONS; IRON IMPURITIES; LIGHT INDUCED REACTION; VACANCY CONCENTRATION; WHITE-LIGHT ILLUMINATION;

IRON;

EID: 77956373922     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3474658     Document Type: Conference Paper

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