PECVD SINx induced hydrogen passivation in String Ribbon silicon

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 91-94

  Yelundur, V ^a   Rohatgi, A ^a   Jeong, J W ^a   Gabor, A M ^b   Hanoka, J I ^b   Wallace, R L ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Evergreen Solar Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CARRIER LIFETIME; DEFECTS; HYDROGEN; SILICON NITRIDE; SOLAR POWER GENERATION;

DEFECT PASSIVATION; HIGH TEMPERATURE PASSIVATION; HIGH-EFFICIENCY; HYDROGEN PASSIVATION; INDUCED DEFECTS; MINORITY CARRIER LIFETIMES; POST-DEPOSITION ANNEAL; RIBBON SILICONS;

PASSIVATION;

EID: 84949553913     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.915760     Document Type: Conference Paper

References (9)

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