Special features of radiation-defect annealing in silicon p-n structures: The role of Fe impurity atoms

Semiconductors

Volumn 38, Issue 9, 2004, Pages 1041-1046

  Komarov, B A ^a  

^a INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

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EID: 6344258777     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1797482     Document Type: Article

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