Dissociation of iron-related centers in Si stimulated by hydrogen

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 71, Issue 1-3, 2000, Pages 268-271

  Feklisova, O V ^a   Parakhonsky, A L ^a   Yakimov, E B ^a   Weber, J ^b  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION IN SOLIDS; ETCHING; HYDROGEN; IRON; POINT DEFECTS; SEMICONDUCTOR DOPING;

REVERSE BIAS ANNEALING (RBA);

SEMICONDUCTING SILICON;

EID: 0033874552     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00388-8     Document Type: Article

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