Hydrogenation of defects in edge-defined film-fed grown aluminum-enhanced plasma enhanced chemical vapor deposited silicon nitride multicrystalline silicon

Journal of Applied Physics

Volumn 87, Issue 10, 2000, Pages 7551-7557

  Jeong, Ji Weon ^a   Rosenblum, Mark D ^b   Kalejs, Juris P ^b   Rohatgi, Ajeet ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b ASE Americas Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000219698     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373427     Document Type: Article

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