Fundamental understanding and implementation of Al-enhanced PECVD SiNx hydrogenation in silicon ribbons

Solar Energy Materials and Solar Cells

Volumn 74, Issue 1-4, 2002, Pages 117-126

  Rohatgi, A ^a   Yelundur, V ^a   Jeong, J ^a   Ebong, A ^a   Rosenblum, M D ^b   Hanoka, J I ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b ASE Americas Inc   (United States)

^c Evergreen Solar Inc   (United States)

Author keywords

Hydrogen passivation; Multicrystalline silicon; Silicon nitride; Solar cell

Indexed keywords

ALUMINUM ALLOYS; ANNEALING; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; FIRING (OF MATERIALS); HYDROGENATION; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCREEN PRINTING; SILICON NITRIDE;

RAPID COOLING;

SILICON SOLAR CELLS;

EID: 0036778613     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(02)00055-7     Document Type: Article

References (9)

1. x-induced hydrogen passivation in String Ribbon silicon
2. Trapping of minority carriers in multicrystalline silicon
3. 2 and SiN films
4. Optimized aluminum back surface techniques for silicon solar cells
5. 2 in silicon
6. Hydrogen-defect interactions in Si
7. Thermal stability of hydrogen molecule in crystalline silicon