Measuring dopant concentrations in compensated p -type crystalline silicon via iron-acceptor pairing

Applied Physics Letters

Volumn 92, Issue 20, 2008, Pages

  MacDonald, D ^a   Cuevas, A ^a   Geerligs, L J ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b TNO   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTALLINE MATERIALS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; SILICON WAFERS;

ACCEPTOR CONCENTRATION; IMPURITY SCATTERINGS; IONIZED ACCEPTORS; IONIZED DONORS; MOBILITY MODEL; ROOM TEMPERATURE;

POLYSILICON;

EID: 44349172292     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2936840     Document Type: Article

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