Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers

Journal of Crystal Growth

Volumn 311, Issue 12, 2009, Pages 3239-3242

  Moram, M A ^a   Johnston, C F ^a   Kappers, M J ^a   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

A1. Crystal structure; A1. Line defects; A1. Planar defects; A3. Metalorganic vapour phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

A1. CRYSTAL STRUCTURE; A1. LINE DEFECTS; A1. PLANAR DEFECTS; A3. METALORGANIC VAPOUR PHASE EPITAXY; B1. NITRIDES; B2. SEMICONDUCTING III-V MATERIALS;

COMPOSITE FILMS; CORUNDUM; CRYSTAL GROWTH; DEFECTS; DISLOCATIONS (CRYSTALS); GALLIUM ALLOYS; GALLIUM NITRIDE; SCANDIUM; SEMICONDUCTING GALLIUM; SURFACE ROUGHNESS; VAPOR PHASE EPITAXY;

CRYSTAL STRUCTURE;

EID: 66049137636     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.03.029     Document Type: Article

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