Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy

Journal of Crystal Growth

Volumn 312, Issue 19, 2010, Pages 2683-2688

  Cordier, Y ^a   Moreno, J C ^a   Baron, N ^a,b   Frayssinet, E ^a   Chauveau, J M ^a,c   Nemoz, M ^a   Chenot, S ^a   Damilano, B ^a   Semond, F ^a  

^a CRHEA CNRS   (France)

^b Picogiga International   (France)

^c UNIVERSITÉ CÔTE D'AZUR   (France)

Author keywords

A1. Molecular beam epitaxy; B1. GaN on silicon; B1. Nitrides; B3. High electron mobility transistor; B3. Light emitting diode

Indexed keywords

A1. MOLECULAR BEAM EPITAXY; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; B1. GAN ON SILICON; B1. NITRIDES; DIFFERENT SUBSTRATES; GROWTH OF GAN; HIGH ELECTRON MOBILITY; INGAN/GAN; OPTICAL AND ELECTRICAL PROPERTIES; SI (1 1 1); THREADING DISLOCATION DENSITIES;

DIODES; ELECTRIC PROPERTIES; ELECTRON MOBILITY; ELECTRONS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHYSICAL OPTICS; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77956186734     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.06.024     Document Type: Article

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