Influence of buffer layers on metalorganic vapor phase epitaxy grown GaN on Si(001)

Applied Physics Letters

Volumn 84, Issue 23, 2004, Pages 4747-4749

  Schulze, F ^a   Dadgar, A ^a   Blasing J ^a   Krost, A ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; GRAPHITE; METALLORGANIC VAPOR PHASE EPITAXY; MONOCHROMATORS; SCANNING ELECTRON MICROSCOPY; SILICON; SUPERLATTICES; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

BRAGG-BRENTANO GEOMETRY; BUFFER LAYERS; GROWTH ORIENTATIONS; GROWTH PARAMETERS;

GALLIUM NITRIDE;

EID: 3042545311     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1760214     Document Type: Article

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