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Applied Physics Letters

Volumn 96, Issue 7, 2010, Pages

GaN stripes on vertical {111} fin facets of (110)-oriented Si substrates

(8) Kuryatkov, V V a,b Feng, W a,b Pandikunta, M a,b Woo, J H c Garcia, D d Harris, H R c Nikishin, S A a,b Holtz, M a

a TEXAS TECH UNIVERSITY (United States)

b Texas Tech University (United States)

c TEXAS A AND M UNIVERSITY (United States)

d SVTC Technologies (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN BUFFER; BAND-GAP EMISSION; COMPRESSIVE STRAIN; MATERIAL QUALITY; MICRO-CATHODOLUMINESCENCE; NARROW-LINE WIDTH; RAMAN MEASUREMENTS; SI SUBSTRATES; SPATIAL DEPENDENCE; VERTICAL FINS;

CRYSTAL GROWTH; FINS (HEAT EXCHANGE); FORCED CONVECTION; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

GALLIUM ALLOYS;

EID: 77249116799 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3310279 Document Type: Article

Times cited : (7)

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