Selective epitaxial Si/SiGe growth for VT shift adjustment in high k pMOS devices

Semiconductor Science and Technology

Volumn 22, Issue 1, 2007, Pages

  Loo, R ^a   Sorada, H ^b   Inoue, A ^b   Lee, B C ^c   Hyun, S ^c   Jakschik, S ^a   Lujan, G ^a,d   Hoffmann, T Y ^a   Caymax, M ^a  

^a IMEC   (Belgium)

^b PANASONIC CORPORATION   (Japan)

^c SAMSUNG Electronics   (South Korea)

^d AMS AG   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DIELECTRIC MATERIALS; ELECTRON MOBILITY; ENERGY DISPERSIVE SPECTROSCOPY; MOS DEVICES; SEMICONDUCTING SILICON COMPOUNDS; THRESHOLD VOLTAGE;

BURIED STRAINED SIGE; CHANNEL MOBILITY; GATE LEAKAGE; HIGH K DIELECTRICS;

EPITAXIAL GROWTH;

EID: 34047213228     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/1/S26     Document Type: Article

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