Hole mobility enhancement and Si cap optimization in nanoscale strained Si1-xGex PMOSFETs

Solid-State Electronics

Volumn 48, Issue 12, 2004, Pages 2299-2306

  Shi, Zhonghai ^a   Onsongo, David ^a   Rai, Raghaw ^b   Samavedam, Srikanth B ^b   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); HETEROJUNCTIONS; HOLE MOBILITY; LEAKAGE CURRENTS; NANOTECHNOLOGY; PROBLEM SOLVING; SILICON COMPOUNDS; THICKNESS MEASUREMENT;

DRAIN JUNCTION; NANOSCALES; SHORT CHANNEL EFFECTS (SCE);

MOSFET DEVICES;

EID: 4544358496     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.04.016     Document Type: Article

References (14)

1. Tasch AF. The challenges in achieving sub-100 nm MOSFETs. In: Second Annual IEEE International Conference on Innovative Systems in Silicon Proceedings. 1997. p. 52-60.
2. Dort M.J., Woerlee P.H., Walker A.J., Juffermans C.A.H., Lifka H. Influence of high substrate doping levels on the threshold voltage and the mobility of deep-submicrometer MOSFET's. IEEE. Trans. Electron Devices. 39(4):1992;932-938.
3. Fischetti M.V., Laux S.E. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys. J. Appl. Phys. 80(4):1996;2234-2252.
4. Xie Y.H., Fitzgerald E.A., Monroe D., Silverman P.J., Watson G.P. Fabrication of high mobility two-dimensional electron and hole gasses in GeSi/Si. J. Appl. Phys. 73(15):1993;8364-8370.
5. Kaya S., Zhao Y.P., Watling J.R., Asenov A., Barker J.R., Ansaripour G., et al. Indication of velocity overshoot in strained SiGe p-channel MOSFETs. Semicond. Sci. Technol. 15(6):2000;573-578.
6. Rim K, Chu J, Chen H, Jenkins KA, Kanarsky T, Lee K, et al. Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs. In: Symposium on VLSI Tech. 2002. p. 98-9.
7. Yeo Y.C., Lu Q., King T.J., Hu C., Kawashima T., Oishi M., et al. Enhanced performance in sub-100 nm CMOSFET's using strained epitaxial silicon-germanium. IEDM Tech. Dig. 2000;753-756.
8. x buried channel p-MOSFETs. Solid-State Electron. 44:2000;1223-1228.
9. x/Si heterostructures. J. Appl. Phys. 70(4):1991;2136-2151.
10. Goeller P.T., Boyanov B.I., Sayers D.E., Nemanich R.J. Structure and stability of cobalt-silicon-germanium thin films. Nucl. Instr. and Meth. Phys. Res. B. 133:1997;84-89.
11. MEDICI, Version 1998.4.1, Avant! Corp. and TMA, Inc. 1998.
12. x epitaxial layers. J. Appl. Phys. 89(2):2001;980-987.
13. x epitaxial layers. Phys. Rev. Lett. 71(6):1993;883-886.
14. Eguchi S., Hoyt J.L., Leitz C.W., Fitzgerald E.A. Comparison of arsenic and phosphorus diffusion behavior in silicon germanium alloys. Appl. Phys. Lett. 80(10):2002;1743-1745.