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Volumn 483, Issue 1-2, 2009, Pages 600-603
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Ultrafast time-resolved spectroscopy of ZnSe nanowires: Carrier dynamics of defect-related states
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Author keywords
Carrier; Defect related states; ZnSe nanowires
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Indexed keywords
BAND-EDGE EMISSIONS;
CARRIER;
CARRIER DYNAMICS;
CHARACTERISTIC EMISSION;
DEEP DEFECTS;
DEFECT STATE;
FEMTOSECOND PULSE;
GROWTH CONDITIONS;
INDUCED ABSORPTION;
INTRINSIC POINT DEFECTS;
NANOSTRUCTURE MATERIAL;
OPTICAL EXCITATIONS;
OPTICAL PARAMETRIC AMPLIFIERS;
PHOTOGENERATED CARRIERS;
PICOSECONDS;
POTENTIAL APPLICATIONS;
ROOM TEMPERATURE PHOTOLUMINESCENCE SPECTRA;
STATE-FILLING;
TEMPORAL DYNAMICS;
TIME-RESOLVED SPECTROSCOPY;
TIME-SCALES;
ULTRA-FAST;
VAPOR-LIQUID-SOLID GROWTH;
WAVELENGTH TUNABLE;
ZNSE NANOWIRES;
ABSORPTION;
ELECTRIC WIRE;
ELECTROMAGNETIC PULSE;
EMISSION SPECTROSCOPY;
LASER SPECTROSCOPY;
LIGHT AMPLIFIERS;
LIGHT TRANSMISSION;
MICROWAVE AMPLIFIERS;
NANOWIRES;
PARAMETRIC AMPLIFIERS;
PHOTOEXCITATION;
PHOTOLUMINESCENCE;
POINT DEFECTS;
SEMICONDUCTING ZINC COMPOUNDS;
DEFECTS;
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EID: 69249242916
PISSN: 09258388
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jallcom.2008.07.197 Document Type: Article |
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Times cited : (25)
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References (11)
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