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Volumn 175-176, Issue PART 1, 1997, Pages 72-78

Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy

(9) Johnson, M A L a Hughes, W C a Rowland Jr , W H a Cook Jr , J W a Schetzina, J F a Leonard, M b Kong, H S b Edmond, J A b Zavada, J c

a NORTH CAROLINA STATE UNIVERSITY (United States)

b Arkansas Power Electronics International Inc (United States)

c U S ARMY RESEARCH OFFICE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DEPOSITION; NUCLEATION; PHOTOLUMINESCENCE; PLASMA SOURCES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

GALLIUM NITRIDE; MODULATED BEAM METHOD;

MOLECULAR BEAM EPITAXY;

EID: 0001866991 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)01019-6 Document Type: Article

Times cited : (43)

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