SCOPUS 정보 검색 플랫폼

Volumn 175-176, Issue PART 1, 1997, Pages 72-78

Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy

(9) Johnson, M A L a Hughes, W C a Rowland Jr , W H a Cook Jr , J W a Schetzina, J F a Leonard, M b Kong, H S b Edmond, J A b Zavada, J c

a NORTH CAROLINA STATE UNIVERSITY (United States)

b Research Triangle Park (United States)

c U S ARMY RESEARCH OFFICE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DEPOSITION; NUCLEATION; PHOTOLUMINESCENCE; PLASMA SOURCES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

GALLIUM NITRIDE; MODULATED BEAM METHOD;

MOLECULAR BEAM EPITAXY;

EID: 0001866991 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)01019-6 Document Type: Article

Times cited : (43)

References (14)

1
- 0000815007
- S. Strite and H. Morkoç, J. Vac. Sci. Technol. B 10 (1992) 1237.
- (1992) J. Vac. Sci. Technol. B , vol.10 , pp. 1237
- Strite, S.¹ Morkoç, H.²

2
- 0029779805
- S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto, Jpn. J. Appl. Phys. 35 (1996) L74.
- (1996) Jpn. J. Appl. Phys. , vol.35
- Nakamura, S.¹ Senoh, M.² Nagahama, S.³ Iwasa, N.⁴ Yamada, T.⁵ Matsushita, T.⁶ Kiyoku, H.⁷ Sugimoto, Y.⁸

3
- 0026413320
- W.E. Hoke, P.J. Lemonias and D.G. Weir, J. Crystal Growth 111 (1991) 1024.
- (1991) J. Crystal Growth , vol.111 , pp. 1024
- Hoke, W.E.¹ Lemonias, P.J.² Weir, D.G.³

4
- 30244455259
- R.P. Vaudo, Z. Yu, J.W. Cook, Jr. and J.F. Schetzina, Opt. Lett. 66 (1995) 268.
- (1995) Opt. Lett. , vol.66 , pp. 268
- Vaudo, R.P.¹ Yu, Z.² Cook J.W., Jr.³ Schetzina, J.F.⁴

5
- 0242279708
- W.C. Hughes, W.H. Rowland, Jr., M.A.L. Johnson, Sz. Fujita, J.W. Cook, Jr., J.F. Schetzina, J. Ren and J.A. Edmond, J. Vac. Sci. Technol. B 13 (1995) 1571.
- (1995) J. Vac. Sci. Technol. B , vol.13 , pp. 1571
- Hughes, W.C.¹ Rowland W.H., Jr.² Johnson, M.A.L.³ Fujita, Sz.⁴ Cook J.W., Jr.⁵ Schetzina, J.F.⁶ Ren, J.⁷ Edmond, J.A.⁸

6
- 5544292876
- M.A.L. Johnson, Sz. Fujita, W.H. Rowland, Jr., K.A. Bowers, W.C. Hughes, Y.W. He, N.A. El-Masry, J.W. Cook, Jr., J.F. Schetzina, J. Ren and J.A. Edmond, J. Vac. Sci. Technol. B 14 (1996) 2349.
- (1996) J. Vac. Sci. Technol. B , vol.14 , pp. 2349
- Johnson, M.A.L.¹ Fujita, Sz.² Rowland W.H., Jr.³ Bowers, K.A.⁴ Hughes, W.C.⁵ He, Y.W.⁶ El-Masry, N.A.⁷ Cook J.W., Jr.⁸ Schetzina, J.F.⁹ Ren, J.¹⁰ Edmond, J.A.¹¹

7
- 0000181957
- M. Marezio, Acta. Cryst. 18 (1965) 481.
- (1965) Acta. Cryst. , vol.18 , pp. 481
- Marezio, M.¹

8
- 0024766796
- I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu and N. Sawaki, J. Crystal Growth 98 (1989) 209.
- (1989) J. Crystal Growth , vol.98 , pp. 209
- Akasaki, I.¹ Amano, H.² Koide, Y.³ Hiramatsu, K.⁴ Sawaki, N.⁵

9
- 0344548628
- S. Yoshida, S. Misawa and S. Gonda, Appl. Phys. Lett. 42 (1983) 427.
- (1983) Appl. Phys. Lett. , vol.42 , pp. 427
- Yoshida, S.¹ Misawa, S.² Gonda, S.³

10
- 30244457687
- PhD Thesis, Rensselaer Polytechnic Institute
- R.D. Jones, PhD Thesis, Rensselaer Polytechnic Institute (1986).
- (1986)
- Jones, R.D.¹

11
- 0028762066
- M. Shimizu, K. Hiramatsu and N. Sawaki, J. Crystal Growth 145 (1994) 209.
- (1994) J. Crystal Growth , vol.145 , pp. 209
- Shimizu, M.¹ Hiramatsu, K.² Sawaki, N.³

12
- 30244524955
- S. Bedair, Mater. Res. Soc. Symp. Proc. 331 (1996) 561.
- (1996) Mater. Res. Soc. Symp. Proc. , vol.331 , pp. 561
- Bedair, S.¹

13
- 0040541724
- N. Yoshimoto, T. Matsuoka, T. Sasaki and A. Katsui, Appl. Phys. Lett. 59 (18) (1991) 2251.
- (1991) Appl. Phys. Lett. , vol.59 , Issue.18 , pp. 2251
- Yoshimoto, N.¹ Matsuoka, T.² Sasaki, T.³ Katsui, A.⁴

14
- 25744466582
- S. Nakamura and T. Mukai, Jpn. J. Appl. Phys. 31 (1992) L1457.
- (1992) Jpn. J. Appl. Phys. , vol.31
- Nakamura, S.¹ Mukai, T.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.