Optoelectronic characterization of blue InGaN/GaN LEDS grown by MBE

Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 256-258

  Dalmasso, S ^a   Damilano, B ^a   Grandjean, N ^a   Massies, J ^a   Leroux, M ^a   Reverchon, J L ^b   Duboz, J Y ^b  

^a CNRS   (France)

^b LCR   (France)

Author keywords

Electroluminescence; LEDs; MBE; Tunneling current

Indexed keywords

ELECTRIC CURRENTS; ELECTROLUMINESCENCE; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

TUNNELING INJECTION CURRENTS;

LIGHT EMITTING DIODES;

EID: 0035933072     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00766-2     Document Type: Article

References (9)