Temperature-dependent light-emitting characteristics of InGaN/GaN diodes

Microelectronics Reliability

Volumn 49, Issue 1, 2009, Pages 38-41

  Liu, Jun ^a   Tam, W S ^a   Wong, H ^a   Filip, V ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CIVIL AVIATION; ELECTROLUMINESCENCE; LIGHT EMISSION; LIGHT EMITTING DIODES; OXYGEN; SEMICONDUCTOR QUANTUM WELLS;

DEEP TRAPS; DEVICE RELIABILITIES; EMISSION PEAKS; EMITTING CHARACTERISTICS; FREEZING EFFECTS; HEAT DISSIPATIONS; HIGH TEMPERATURES; INGAN/GAN; INJECTED CARRIERS; MEASUREMENT RESULTS; NITROGEN VACANCIES; QUANTUM WELLS; RADIATIVE RECOMBINATIONS; REVERSE CURRENTS; SHALLOW DEFECTS; TEMPERATURE RANGING; TUNNELING CURRENTS; VOLTAGE CHARACTERISTICS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 58149105446     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.10.002     Document Type: Article

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