Electrical characteristics of Mg-doped GaN activated with Ni catalysts

Applied Surface Science

Volumn 190, Issue 1-4, 2002, Pages 348-351

  Kamii, Y ^a   Waki, I ^a   Fujioka, H ^a   Oshima, M ^a   Miki, H ^b   Okuyama, M ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b Showa Denko Materials Co   (Japan)

Author keywords

Activation; Hall effect; p GaN; Thermal annealing

Indexed keywords

ACTIVATION ANALYSIS; ANNEALING; CATALYST ACTIVITY; DESORPTION; HALL EFFECT; HYDROGEN; IONIZATION; MAGNESIUM PRINTING PLATES; NICKEL; SEMICONDUCTOR DOPING;

THERMAL ANNEALING;

GALLIUM NITRIDE;

EID: 0037042109     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00846-7     Document Type: Article

References (7)