Emission studies of InGaN layers and LEDs grown by plasma-assisted MBE

Journal of Crystal Growth

Volumn 230, Issue 3-4, 2001, Pages 503-506

  Laukkanen, Pekka ^a   Lehkonen, Sami ^a   Uusimaa, Petteri ^a   Pessa, Markus ^a   Seppälä, Anni ^b   Ahlgren, Tommy ^b   Rauhala, Eero ^b  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^b UNIVERSITY OF HELSINKI   (Finland)

Author keywords

A3. Molecular beam epitaxy; B1. Nitrides; B3. Light emitting diodes

Indexed keywords

COMPOSITION EFFECTS; ELECTRIC CONTACTS; FILM PREPARATION; GALLIUM NITRIDE; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PHASE SEPARATION; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

SEMICONDUCTING FILMS;

EID: 0035451288     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01293-3     Document Type: Article

References (7)