Growth of In-rich InGaN on InN template by radio-frequency plasma assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

  Kurouchi, M ^a   Yamaguchi, T ^a   Naoi, H ^a   Suzuki, A ^a   Araki, T ^a   Nanishi, Y ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

A1. Crystal morphology; A1. X ray diffraction; A2. RF MBE; B1. InGaN; B1. InN

Indexed keywords

CRYSTALLIZATION; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOLUMINESCENCE; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; THERMOANALYSIS; X RAY DIFFRACTION;

CRYSTAL MORPHOLOGY; INGAN; INN; RADIO FREQUENCY (RF); RADIO FREQUENCY (RF) MOLECULAR BEAM EPITAXY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 15844404692     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.131     Document Type: Conference Paper

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