Comparison of time-resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Garrett, Gregory A ^a   Shen, Hongen ^a   Wraback, Michael ^a   Tyagi, Anurag ^b   Schmidt, Mathew C ^b   Speck, James S ^b   DenBaars, Steven P ^b   Nakamaura, Shuji ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LOCALIZATION; GAN SUBSTRATE; HIGH QUALITY; NON-POLAR; NON-RADIATIVE RECOMBINATIONS; PUMP FLUENCE; RADIATIVE LIFETIME; SAMPLE TEMPERATURE; SEMIPOLAR; SINGLE QUANTUM WELL; TIME-RESOLVED PHOTOLUMINESCENCE; WELL WIDTH;

GALLIUM ALLOYS; GALLIUM NITRIDE; PHOTOLUMINESCENCE; PUMPS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 73349097619     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880974     Document Type: Article

References (5)

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