Carrier relaxation in InGaN/GaN quantum wells with nanometer-scale cluster structures

Applied Physics Letters

Volumn 85, Issue 8, 2004, Pages 1371-1373

  Wang, Hsiang Chen ^a   Lin, Shih Chun ^a   Lu, Yen Chen ^a   Cheng, Yung Chen ^a   Yang, C C ^a   Ma, Kung Jen ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b CHUNG HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL LASERS; ELECTRON ENERGY LEVELS; OSCILLATIONS; PHOTOLUMINESCENCE; POLARIZATION; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; THERMOANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES;

DECAY TIME; GLOBAL QUASI-EQUILIBRIUM; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); TIME-RESOLVED PHOTOLUMINESCENCE (TRPL) MEASUREMENTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 4544259049     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1784033     Document Type: Article

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