Cause of data retention loss in a nitride-based localized trapping storage flash memory cell

IEEE International Reliability Physics Symposium Proceedings

Volumn 2002-January, Issue , 2002, Pages 34-38

  Tsai, W J ^a   Gu, S H ^b   Zous, N K ^b   Yeh, C C ^a   Liu, C C ^a   Chen, C H ^a   Wang, Tahui ^b   Pan, S ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Charge pumps; Data engineering; Density measurement; Electron traps; Electronics industry; Fabrication; Flash memory cells; Industrial electronics; SONOS devices; Stress

Indexed keywords

CELL ENGINEERING; DENSITY MEASUREMENT (SPECIFIC GRAVITY); DIGITAL STORAGE; ELECTRON TRAPS; ELECTRONICS INDUSTRY; FABRICATION; INDUSTRIAL ELECTRONICS; MEMORY ARCHITECTURE; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NITRIDES; SEMICONDUCTOR STORAGE; STRESSES;

CHARGE PUMP; CHARGE SEPARATIONS; DATA ENGINEERING; FLASH MEMORY CELL; LATERAL MIGRATION; NORMAL OPERATIONS; SONOS DEVICES; TYPE STRUCTURES;

FLASH MEMORY;

EID: 84949234877     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2002.996607     Document Type: Conference Paper

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