Analytical percolation model for predicting anomalous charge loss in flash memories

IEEE Transactions on Electron Devices

Volumn 51, Issue 9, 2004, Pages 1392-1400

  Degraeve, Robin ^a   Schuler, F ^b   Kaczer, Ben ^a   Lorenzini, Martino ^a   Wellekens, Dirk ^a   Hendrickx, Paul ^a   van Duuren, Michiel ^c   Dormans, G J M ^d   Van Houdt, Jan ^a   Haspeslagh, L ^a   Groeseneken, Guido ^a,e   Tempel, Georg ^b  

^a IMEC   (Belgium)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d NXP SEMICONDUCTORS   (Netherlands)

^e UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANAMALOUS CHARGE LOSS; DATA RETENTION; LEAKAGE MECHANISM; OXIDE TRAPS; PERCOLATION MODEL; STRESS INDUCED LEAKAGE CURRENT; TUNNEL OXIDE VOLTAGES;

CALCULATIONS; ELECTRIC CURRENT DISTRIBUTION; ELECTRIC POTENTIAL; ELECTRON TRAPS; ELECTRON TUNNELING; ELECTRONIC DENSITY OF STATES; GATES (TRANSISTOR); LEAKAGE CURRENTS; MATHEMATICAL MODELS; PERCOLATION (COMPUTER STORAGE);

FLASH MEMORY;

EID: 4444223758     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.833583     Document Type: Article

References (17)

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