Application of phosphorus diffusion gettering process on upgraded metallurgical grade Si wafers and solar cells

Applied Energy

Volumn 87, Issue 11, 2010, Pages 3425-3430

  Xu, H B ^a   Hong, R J ^a   Ai, B ^a   Zhuang, L ^a   Shen, H ^a  

^a SUN YAT SEN UNIVERSITY   (China)

Author keywords

Conversion efficiency; Impurity content; Minority carrier lifetime; Phosphorus diffusion gettering; Upgraded metallurgical grade Si

Indexed keywords

CARRIER LIFETIME; CONVERSION EFFICIENCY; DIFFUSION; EFFICIENCY; METALLURGY; MONOCRYSTALLINE SILICON; PHOSPHORUS; SILICON; SILICON WAFERS; SOLAR CELLS; SOLAR POWER GENERATION;

GETTERING; IMPURITY CONCENTRATION; IMPURITY CONTENT; MINORITY CARRIER LIFETIMES; MULTICRYSTALLINE SI; PHOSPHORUS DIFFUSION; PHOTOVOLTAIC TECHNOLOGY; UPGRADED METALLURGICAL-GRADE SILICONS;

SILICON SOLAR CELLS;

DIFFUSION; ELECTRONIC EQUIPMENT; PHOSPHORUS; PHOTOVOLTAIC SYSTEM; SILICON; TEMPERATURE PROFILE;

EID: 77955172144     PISSN: 03062619     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apenergy.2010.03.026     Document Type: Article

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